VLSI PROCESS NOTES FREE PPT PDF

• 1 Introduction
  • 1.1 Simulation Tasks in Process Simulation
    • 1.1.1 Lithography
    • 1.1.2 Etching and Deposition
    • 1.1.3 Ion Implantation
    • 1.1.4 Annealing
    • 1.1.5 Oxidation
  • 1.2 About this Work
• 2 Analytical Ion Implantation
  • 2.1 Statistical Moments and Distributions
    • 2.1.1 Central Moments and their Distribution Functions
    • 2.1.2 Probability Weighted Moments and their Distribution Functions
    • 2.1.3 Evaluation of Statistical Moments from Data Sets
  • 2.2 Two-Dimensional Profiles in Multilayer Structures
    • 2.2.1 Numerical Range Scaling
    • 2.2.2 Convolution Method
  • 2.3 Comparison Analytical - Monte Carlo Simulation Method
• 3 The Diffusion Process in Semiconductor Materials
  • 3.1 Diffusion in Silicon
    • 3.1.1 Intrinsic Point Defects
    • 3.1.2 Sources and Sinks for Point Defects
    • 3.1.3 Intrinsic Dopant Diffusion
    • 3.1.4 Extrinsic Dopant Diffusion
    • 3.1.5 High Concentration Effects
  • 3.2 Diffusion in Polysilicon
    • 3.2.1 Fabrication and Morphology of Polysilicon Layers
    • 3.2.2 Polysilicon Grain Growth
    • 3.2.3 Extrinsic Diffusion
    • 3.2.4 Epitaxial Realignment of Polysilicon
  • 3.3 Diffusion in Oxide and Silicides
• 4 Simulation of Diffusion Processes
  • 4.1 Numerical Solution of the Diffusion Equation
    • 4.1.1 Grid Generation
      • Grid Refinement
    • 4.1.2 Discretization of the PDEs
      • Box-Integration Method
      • Diffusion Current Discretization
      • Time Discretization
      • Boundary conditions
    • 4.1.3 Nonlinear Equation Solution
      • Newton-Iteration Method
    • 4.1.4 The Linear System
      • Pre-elimination
      • Scaling
      • Pre-conditioning
      • Solvers
    • 4.1.5 Transient Integration
  • 4.2 Design of a Diffusion Simulator
    • 4.2.1 Grid Module
    • 4.2.2 Assembling the Diffusion Equation
  • 4.3 Diffusion Model Library
    • 4.3.1 Coupled and Uncoupled Diffusion
      • Model Parameters
    • 4.3.2 Clustering and Precipitation
      • Model Parameters
    • 4.3.3 Transient Enhanced Diffusion
      • Model Parameters
      • Model Verification
    • 4.3.4 Transient Dopant Activation
      • Model Parameters
      • Model Verification
    • 4.3.5 Polysilicon Diffusion
      • Model Parameters
      • Model Verification
  • 4.4 Material Interface Models
    • 4.4.1 Conduction Model
    • 4.4.2 Segregation Model
    • 4.4.3 Poly-/Monosilicon Model
• 5 Applications
  • 5.1 Polysilicon Emitter
  • 5.2 BiCMOS Process Technology
    • 5.2.1 BiCMOS Process Flow
    • 5.2.2 Process Discussion
    • 5.2.3 Simulation Results